
IRFP4668PBF
ActivePOWER MOSFET, N CHANNEL, 200 V, 130 A, 0.008 OHM, TO-247AC, THROUGH HOLE
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IRFP4668PBF
ActivePOWER MOSFET, N CHANNEL, 200 V, 130 A, 0.008 OHM, TO-247AC, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFP4668PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 130 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 241 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 10720 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 520 W |
| Rds On (Max) @ Id, Vgs | 9.7 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFP4668 Series
The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Documents
Technical documentation and resources