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IRFP4668PBF - TO-247-3 AC EP

IRFP4668PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 200 V, 130 A, 0.008 OHM, TO-247AC, THROUGH HOLE

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IRFP4668PBF - TO-247-3 AC EP

IRFP4668PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 200 V, 130 A, 0.008 OHM, TO-247AC, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFP4668PBF
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]241 nC
Input Capacitance (Ciss) (Max) @ Vds10720 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]520 W
Rds On (Max) @ Id, Vgs9.7 mOhm
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.80
10$ 5.31
100$ 3.89
500$ 3.42
NewarkEach 1$ 5.63
10$ 4.74
25$ 3.83

Description

General part information

IRFP4668 Series

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

Documents

Technical documentation and resources