IS46LQ16512A-062BLA1
ActiveISSI, Integrated Silicon Solution Inc
DRAM AUTOMOTIVE (TC: -40 TO +95C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 512MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS
IS46LQ16512A-062BLA1
ActiveISSI, Integrated Silicon Solution Inc
DRAM AUTOMOTIVE (TC: -40 TO +95C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 512MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS
Description
General part information
IS46LQ16512A-062BLA1
SDRAM - Mobile LPDDR4 Memory IC 8Gbit LVSTL 1.6 GHz 3.5 ns 200-TFBGA (10x14.5)
Technical Specifications
Parameters and characteristics for this part
| Specification | IS46LQ16512A-062BLA1 |
|---|---|
| Access Time | 3.5 ns |
| Clock Frequency | 1.6 GHz |
| Grade | Automotive |
| Memory Depth | 512 M |
| Memory Format | DRAM |
| Memory Interface (Type) | LVSTL |
| Memory Size | 1 GB |
| Memory Type | Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 95 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 200-TFBGA |
| Package Length | 10 mm |
| Package Name | 200-TFBGA |
| Package Width | 14.5 mm |
| Qualification | AEC-Q100 |
| Technology | SDRAM - Mobile LPDDR4 |
| Voltage - Supply (Range 1 Maximum) | 1.17 V |
| Voltage - Supply (Range 1 Minimum) | 1.06 V |
| Voltage - Supply (Range 2 Maximum) | 1.95 V |
| Voltage - Supply (Range 2 Minimum) | 1.7 V |
| Write Cycle Time - Page | 18 ns |
| Write Cycle Time - Word | 18 ns |
Pricing
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