DMG4435SSS-13

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Search across all available documentation for this part.

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMG4435SSS-13

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	35.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1614 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

NRND = Not Recommended for New Design

Part	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Diodes Inc DMG4435SSS-13	8-SO	Surface Mount	5 V 20 V	35.4 nC	2.5 W	-55 °C	150 °C	P-Channel	7.3 A	MOSFET (Metal Oxide)	2.5 V	8-SOIC	3.9 mm	0.154 in	25 V	30 V	1614 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NRND = Not Recommended for New Design

Technical documentation and resources