MBR30H100CT

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Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 30A TO220AB

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Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 30A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	MBR30H100CT

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	980 mV

Part	Speed	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]
Taiwan Semiconductor Corporation MBR30H100CT	200 mA 500 ns	30 A	10 µA	Through Hole	TO-220AB	980 mV	Schottky	1 Pair Common Cathode	100 V	TO-220-3	175 ░C	-55 C
Taiwan Semiconductor Corporation MBR30L100CT	200 mA 500 ns	30 A	500 µA	Through Hole	TO-220AB		Schottky	1 Pair Common Cathode	100 V	TO-220-3	150 °C	-55 °C	770 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.79

General part information

Diode Array 1 Pair Common Cathode 100 V 30A Through Hole TO-220-3

Technical documentation and resources