STU6N65K3

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STMicroelectronics

MOSFET N-CH 650V 5.4A IPAK

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STU6N65K3

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STMicroelectronics

MOSFET N-CH 650V 5.4A IPAK

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STU6N65K3	STU6N65 Series

Current - Continuous Drain (Id) @ 25°C	5.4 A	4 - 5.4 A
Drain to Source Voltage (Vdss)	650 V	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	9.8 nC
Input Capacitance (Ciss) (Max) @ Vds	880 pF	226 - 880 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	-	60 W
Power Dissipation (Max) [Max]	110 W	110 W
Rds On (Max) @ Id, Vgs	1.3 Ohm	1.3 Ohm
Rds On (Max) @ Id, Vgs	-	1.35 Ohm
Supplier Device Package	TO-251 (IPAK)	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	25 - 30 V
Vgs(th) (Max) @ Id	4.5 V	4 - 4.5 V

STU6N65 Series

N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package

Part	Technology	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature	Power Dissipation (Max) [Max]
STMicroelectronics STU6N65M2	MOSFET (Metal Oxide)	IPAK, TO-251-3 Short Leads, TO-251AA	650 V	4 A	226 pF	Through Hole	N-Channel	10 V	25 V	1.35 Ohm	-55 °C	150 °C	4 V	60 W	9.8 nC	TO-251 (IPAK)
STMicroelectronics STU6N65K3	MOSFET (Metal Oxide)	IPAK, TO-251-3 Short Leads, TO-251AA	650 V	5.4 A	880 pF	Through Hole	N-Channel	10 V	30 V				4.5 V			TO-251 (IPAK)	1.3 Ohm	150 °C	110 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STU6N65 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

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Technical documentation and resources