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DMG1016VQ-13 - Package Image for SOT563

DMG1016VQ-13

Active
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Search across all available documentation for this part.

DMG1016VQ-13 - Package Image for SOT563

DMG1016VQ-13

Active
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMG1016VQ-13
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C870 mA, 640 mA
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.74 nC
Input Capacitance (Ciss) (Max) @ Vds60.67 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-666, SOT-563
Power - Max [Max]530 mW
Rds On (Max) @ Id, Vgs400 mOhm
Supplier Device PackageSOT-563
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.15
20000$ 0.13
30000$ 0.13

Description

General part information

DMG1016UDW Series

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.