FDY4000CZ
ObsoleteON Semiconductor
COMPLEMENTARY N & P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 20V
FDY4000CZ
ObsoleteON Semiconductor
COMPLEMENTARY N & P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 20V
Description
General part information
FDY4000CZ
This Complementary N & P-Channel MOSFET has been designed using an advanced PowerTrench® process to optimize the RDS(ON)at VGS=2.5V and specify the RDS(ON)at VGS= 1.8V.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDY4000CZ |
|---|---|
| Configuration | N, P-Channel |
| Current - Continuous Drain (Id) (Maximum) | 350 mA |
| Current - Continuous Drain (Id) (Typical) | 600 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 1.1 nC |
| Input Capacitance (Ciss) (Max) | 60 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-563, SOT-666 |
| Package Name | SOT-563F |
| Power - Max | 446 mW |
| Rds On (Max) | 700 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
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Documents
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