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BY25FQ64ELWIG(R)

BY25FQ64ELWIG(R)

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BYTe Semiconductor

64 MBIT, 1.8V (1.65V TO 1.95V),

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BY25FQ64ELWIG(R)

BY25FQ64ELWIG(R)

Active
BYTe Semiconductor

64 MBIT, 1.8V (1.65V TO 1.95V),

Find alt

Description

General part information

BY25FQ64ELWIG(R)

64 MBIT, 1.8V (1.65V TO 1.95V),

Technical Specifications

Parameters and characteristics for this part

SpecificationBY25FQ64ELWIG(R)
Access Time7 ns
Clock Frequency133 MHz
Memory Depth8 M
Memory FormatFLASH
Memory Interface (Type)QPI, SPI - Quad I/O
Memory Size64 Mbit
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case8-WDFN Exposed Pad
Package Length5 mm
Package Name8-WSON
Package Width6 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)2 V
Voltage - Supply (Minimum)1.65 V
Write Cycle Time - Page2.5 ms
Write Cycle Time - Word500 µs

Pricing

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CAD

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Documents

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