Specification	RS7G200CGTB1

Current - Continuous Drain (Id) (Ta)	410 A
Current - Continuous Drain (Id) (Tc)	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	145 nC
Input Capacitance (Ciss) (Max)	9150 pF, 9150 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerTDFN
Package Name	DFN5060-8S
Power Dissipation (Max)	3.6 W, 216 W
Rds On (Max)	0.64 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Technical documentation and resources

No documents available