Specification	RW1E025RPT2CR

Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	5.2 nC
Input Capacitance (Ciss) (Max)	480 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-WEMT
Power Dissipation (Max)	700 mW
Rds On (Max)	75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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