DGD2103S8-13

Obsolete

Diodes Inc

IC GATE DRVR HALF-BRIDGE 8SO

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Obsolete

Diodes Inc

IC GATE DRVR HALF-BRIDGE 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	DGD2103S8-13

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	8-SO
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Gate Type	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
Diodes Inc DGD2103S8-13	290 mA	600 mA	Half-Bridge	8-SOIC	3.9 mm	0.154 in	8-SO	150 °C	-40 °C	2	Inverting Non-Inverting	20 V	10 VDC	Surface Mount	0.8 V 2.5 V	600 V	IGBT N-Channel MOSFET	Independent	35 ns	100 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Inverting, Non-Inverting 8-SO

Technical documentation and resources