RBV1502
ActiveEIC Semiconductor
BRIDGE RECT 1P 200V 15A RBV-25
RBV1502
ActiveEIC Semiconductor
BRIDGE RECT 1P 200V 15A RBV-25
Description
General part information
RBV1502
BRIDGE RECT 1P 200V 15A RBV-25
Technical Specifications
Parameters and characteristics for this part
| Specification | RBV1502 |
|---|---|
| Current - Average Rectified (Io) | 15 A |
| Current - Reverse Leakage | 10 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 4-SIP, RBV-25 |
| Package Name | RBV-25 |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) | 1.1 V |
| Voltage - Peak Reverse (Max) | 200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources