Description
General part information
IAUTN12S5N018GATMA1
The IAUTN12S5N018G is a 1.8 mΩ, 120 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV DCDC converter.
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUTN12S5N018GATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 120 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Gull Wing, 8-PowerSMD |
| Package Name | PG-HSOG-8-1 |
| Qualification | AEC-Q101 |
| Technology | MOSFET (Metal Oxide) |
Pricing
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CAD
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