IRF9Z24NPBF

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Infineon Technologies

POWER MOSFET, P CHANNEL, 55 V, 12 A, 0.175 OHM, TO-220AB, THROUGH HOLE

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IRF9Z24NPBF

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Infineon Technologies

POWER MOSFET, P CHANNEL, 55 V, 12 A, 0.175 OHM, TO-220AB, THROUGH HOLE

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Technical Specifications

Parameters and characteristics for this part

Specification	IRF9Z24NPBF

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	175 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF9Z24 Series

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRF9Z24NPBF	4 V	-55 °C	175 ░C	20 V	Through Hole	55 V	TO-220AB	MOSFET (Metal Oxide)	350 pF	P-Channel	TO-220-3	10 V	45 W	12 A	175 mOhm	19 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 0.79
		10	$ 0.69
		100	$ 0.48
		500	$ 0.40
		1000	$ 0.34
		2000	$ 0.30
		5000	$ 0.29
		10000	$ 0.27
Newark	Each	1	$ 0.61
		10	$ 0.60
		100	$ 0.45
		500	$ 0.37
		1000	$ 0.34
		4000	$ 0.32
		10000	$ 0.28

Description

General part information

IRF9Z24 Series

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

Documents

Technical documentation and resources