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FDMC610P

FDMC610P

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ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -12V. -80A, 3.9MΩ

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FDMC610P

FDMC610P

Active
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -12V. -80A, 3.9MΩ

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Description

General part information

FDMC610P

This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC610P
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)99 nC
Input Capacitance (Ciss) (Max)1250 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePower33
Power Dissipation (Max)48 W, 2.4 W
Rds On (Max)3.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1 V

Pricing

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CAD

3D models and CAD resources for this part