SF66G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 6A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 6A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF66G

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Package / Case
Taiwan Semiconductor Corporation SF66G	400 V	50 pF	Through Hole	Standard	150 °C	-55 °C	1.3 V	DO-201AD	35 ns	6 A	5 µA	200 mA 500 ns	DO-201AD Axial

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General part information

Diode 400 V 6A Through Hole DO-201AD

Technical documentation and resources