Description
General part information
2EDL8033G4BXTMA1
The 2EDL8033G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage and provides full 3 A current capability. The high-side bias voltage is generated using a bootstrap technique using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Independent inputs allow controlling high- and low-side domains independently. Undervoltage lockout (UVLO) on both high- and low-side supplies forces the corresponding outputs low in case of insufficient supply. The 2EDL8033G4B is available in SON-8 pins 4 mm x 4 mm.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2EDL8033G4BXTMA1 |
|---|---|
| Current - Output High | 3 A |
| Current - Output Low | 6 A |
| Current - Peak Output (Max) | 6 A |
| Current - Peak Output (Min) | 3 A |
| Fall Time (Typ) | 106 ns |
| Mounting Type | Surface Mount |
| Number of Channels | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Package Name | PG-VDSON-8-5 |
| Propagation Delay tpHL (Max) | 35 ns |
| Propagation Delay tpLH (Max) | 35 ns |
| Rise Time (Typ) | 195 ns |
| Technology | Magnetic Coupling |
| Voltage - Output Supply (Max) | 17 V |
| Voltage - Output Supply (Min) | 8 V |
Pricing
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