Description
General part information
IAUTN08S5N012LATMA1
Infineon introduces our next advancement in Automotive MOSFET technology, the Dual Gate MOSFET. This truly unique product offers the best of two MOSFET types in one product; the LINFET for slow switching, current limiting, wide SOA, linear mode operation and the ONFET for low on-resistance, low loss, steady-state operation. It’s built upon our proven, high quality, robust, automotive OptiMOS™ 5 80V technology and TOLL package.
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUTN08S5N012LATMA1 |
|---|---|
| Channel Count | 2 |
| Configuration | Common Drain, Common Source, N-Channel |
| Current - Continuous Drain (Id) (Tj) | 300 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Max) | 24 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 15340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-2 |
| Power - Max (Tc) | 375 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.15 mOhm, 1.15 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3.3 V |
Pricing
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