Specification	SISS5710DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	7.2 A
Current - Continuous Drain (Id) (Tc)	26.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	770 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8S
Package Name	PowerPAK® 1212-8S
Power Dissipation (Max)	54.3 W, 4.1 W
Rds On (Max)	31.5 mOhm, 31.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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