Specification	SI4816DY-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Typical)	5.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	12 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max (Value 1)	1 W
Power - Max (Value 2)	1.25 W
Rds On (Max)	22 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V

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