Description
General part information
BSC196N10NSGATMA1
The BSC196N10NS G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC196N10NSGATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 8.5 A |
| Current - Continuous Drain (Id) (Tc) | 45 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 34 nC |
| Input Capacitance (Ciss) (Max) | 2300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-1 |
| Power Dissipation (Max) | 78 W |
| Rds On (Max) | 19.6 mOhm, 19.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources