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IPP034NE7N3GXKSA1

IPP034NE7N3GXKSA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 75 V ; TO-220 PACKAGE; 3.4 MOHM;

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IPP034NE7N3GXKSA1

IPP034NE7N3GXKSA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 75 V ; TO-220 PACKAGE; 3.4 MOHM;

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Description

General part information

IPP034NE7N3GXKSA1

The 75V OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP034NE7N3GXKSA1
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)117 nC
Input Capacitance (Ciss) (Max)8130 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NamePG-TO220-3
Power Dissipation (Max)214 W
Rds On (Max)3.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.8 V

Pricing

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