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PSMN2R6-60PSQ

PSMN2R6-60PSQ

Active
NXP USA Inc.

NOW NEXPERIA PSMN2R6-60PSQ - 150

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PSMN2R6-60PSQ

PSMN2R6-60PSQ

Active
NXP USA Inc.

NOW NEXPERIA PSMN2R6-60PSQ - 150

Find alt

Description

General part information

PSMN2R6-60PSQ

NOW NEXPERIA PSMN2R6-60PSQ - 150

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN2R6-60PSQ
Current - Continuous Drain (Id) (Tc)150 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)140 nC
Input Capacitance (Ciss) (Max)7629 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220AB
Power Dissipation (Max)326 W
Rds On (Max)2.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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