Description
General part information
CY62148ELL-45ZSXI
CY62148ELL-45ZSXI is a high performance CMOS static RAM organized as 512K words by 8-bits. This device features an advanced circuit design to provide ultra-low standby current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (active-low CE HIGH). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active-low CE HIGH), outputs are disabled (active-low OE HIGH), or during an active write operation (active-low CE LOW and active-low WE LOW). It is suitable for interfacing with processors that have TTL I/P levels.
Technical Specifications
Parameters and characteristics for this part
| Specification | CY62148ELL-45ZSXI |
|---|---|
| Access Time | 45 ns |
| Memory Depth | 512 K |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 4 Mbit |
| Memory Type | Volatile |
| Memory Width | 8 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 10.16 mm |
| Package Name | 32-TSOP II, 32-SOIC |
| Package Width | 10.16 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 5.5 V |
| Voltage - Supply (Minimum) | 4.5 V |
| Write Cycle Time - Page | 45 ns |
| Write Cycle Time - Word | 45 ns |
Pricing
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