DMG4468LK3-13

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Diodes Inc

MOSFET, N-CH, 30V, 9.7A, TO-252 ROHS COMPLIANT: YES

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Active

Diodes Inc

MOSFET, N-CH, 30V, 9.7A, TO-252 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DMG4468LK3-13

Current - Continuous Drain (Id) @ 25°C	9.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.85 nC
Input Capacitance (Ciss) (Max) @ Vds	867 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.68 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	1.95 V

N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Diodes Inc DMG4468LK3-13	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	Surface Mount	9.7 A	1.95 V	18.85 nC	1.68 W	20 V	N-Channel	16 mOhm	MOSFET (Metal Oxide)	30 V	TO-252-3	867 pF
Diodes Inc DMG4468LFG	-55 °C	150 °C	8-PowerUDFN	4.5 V 10 V	Surface Mount	7.62 A		18.85 nC	990 mW	20 V	N-Channel		MOSFET (Metal Oxide)	30 V	U-DFN3030-8		15 mOhm	2 V	867 pF
Diodes Inc DMG4468LFG-7	-55 °C	150 °C	8-PowerUDFN	4.5 V 10 V	Surface Mount	7.62 A		18.85 nC	990 mW	20 V	N-Channel		MOSFET (Metal Oxide)	30 V	U-DFN3030-8		15 mOhm	2 V	867 pF

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources