Specification	DI002N10PWK

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	8.4 nC
Input Capacitance (Ciss) (Max)	454 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-PowerUDFN
Package Length	2 mm
Package Name	6-QFN
Package Width	2 mm
Power Dissipation (Max)	2 W
Rds On (Max)	250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

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