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FF4MR20KM1HPHPSA1

FF4MR20KM1HPHPSA1

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INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 245 A, 2 KV, 0.0053 OHM, MODULE

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FF4MR20KM1HPHPSA1

FF4MR20KM1HPHPSA1

Active
INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 245 A, 2 KV, 0.0053 OHM, MODULE

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Description

General part information

FF4MR20KM1HPHPSA1

62 mmCoolSiC™ MOSFEThalf bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology and pre-appliedThermal Interface Material(TIM).

Technical Specifications

Parameters and characteristics for this part

SpecificationFF4MR20KM1HPHPSA1
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Tc)280 A
Drain to Source Voltage (Vdss)2000 V
Gate Charge (Max)1170 nC
Input Capacitance (Ciss) (Max)36100 pF
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseModule
Package NameAG-62MMHB
Rds On (Max)5.3 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)5.15 V

Pricing

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CAD

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