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MUR2X030A06

MUR2X030A06

Obsolete
GeneSiC Semiconductor

DIODE MODULE GP 600V 30A SOT-227

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MUR2X030A06

MUR2X030A06

Obsolete
GeneSiC Semiconductor

DIODE MODULE GP 600V 30A SOT-227

Find alt

Description

General part information

MUR2X030A06

DIODE MODULE GP 600V 30A SOT-227

Technical Specifications

Parameters and characteristics for this part

SpecificationMUR2X030A06
Current - Average Rectified (Io) (per Diode)30 A
Current - Reverse Leakage25 µA
Diode ConfigurationIndependent
Diode Count2
Mounting TypeChassis Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseSOT-227-4, miniBLOC
Package NameSOT-227
Reverse Recovery Time (trr)60 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)1.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

    MUR2X030A06 | GeneSiC Semiconductor | Zenode.ai