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IPP022N12NM6AKSA1

IPP022N12NM6AKSA1

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INFINEON

OPTIMOS™ 6 POWER MOSFET NORMAL LEVEL 120 V IN TO-220 PACKAGE

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IPP022N12NM6AKSA1

IPP022N12NM6AKSA1

Active
INFINEON

OPTIMOS™ 6 POWER MOSFET NORMAL LEVEL 120 V IN TO-220 PACKAGE

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Description

General part information

IPP022N12NM6AKSA1

This is a normal level 120 V MOSFET inTO-220packaging with 2.2 mOhm on-resistance. IPP022N12NM6 is part of Infineon’sOptiMOS™ 6 power MOSFET family.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP022N12NM6AKSA1
Current - Continuous Drain (Id) (Ta)29 A
Current - Continuous Drain (Id) (Tc)203 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On)8 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)141 nC
Input Capacitance (Ciss) (Max)11000 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NamePG-TO220-3-1
Power Dissipation (Max)3.8 W, 395 W
Rds On (Max)2.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.6 V

Pricing

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CAD

3D models and CAD resources for this part