CBR06P65HL
ActiveBruckewell
DIODE SIL CARBIDE 650V 18A 4DFN
CBR06P65HL
ActiveBruckewell
DIODE SIL CARBIDE 650V 18A 4DFN
Description
General part information
CBR06P65HL
DIODE SIL CARBIDE 650V 18A 4DFN
Technical Specifications
Parameters and characteristics for this part
| Specification | CBR06P65HL |
|---|---|
| Current - Average Rectified (Io) | 18 A |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | 4-PowerTSFN |
| Package Length | 8 mm |
| Package Name | 4-DFN |
| Package Width | 8 mm |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V, 1.7 V |
Pricing
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