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TL061ACD - 8-SOIC

TL061ACD

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STMicroelectronics

IC OPAMP JFET 1 CIRCUIT 8SOIC

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TL061ACD - 8-SOIC

TL061ACD

Active
STMicroelectronics

IC OPAMP JFET 1 CIRCUIT 8SOIC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTL061ACDTL061 Series
--
Amplifier TypeJ-FETJ-FET
Current - Input Bias30 pA30 pA
Current - Output / Channel20 mA20 mA
Current - Supply200 µA200 µA
Gain Bandwidth Product1 MHz1 MHz
Mounting TypeSurface MountSurface Mount
Number of Circuits11
Operating Temperature [Max]70 °C70 °C
Operating Temperature [Min]0 °C0 °C
Package / Case8-SOIC8-SOIC
Package / Case [x]0.154 in0.154 in
Package / Case [y]3.9 mm3.9 mm
Slew Rate3.5 V/µs3.5 V/µs
Supplier Device Package8-SOIC8-SOIC
Voltage - Input Offset3 mV3 mV
Voltage - Supply Span (Max) [Max]36 V36 V
Voltage - Supply Span (Min) [Min]6 V6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.31
10$ 1.17
75$ 1.11
150$ 0.91
300$ 0.85

TL061 Series

Low input current (200pA), low power (200uA) 35V JFET Op-Amp, single

PartCurrent - Output / ChannelSupplier Device PackageSlew RateVoltage - Supply Span (Min) [Min]Number of CircuitsCurrent - Input BiasOperating Temperature [Max]Operating Temperature [Min]Voltage - Input OffsetMounting TypePackage / CasePackage / Case [y]Package / Case [x]Current - SupplyVoltage - Supply Span (Max) [Max]Amplifier TypeGain Bandwidth Product
STMicroelectronics
TL061CDT
STMicroelectronics
TL061IDT
STMicroelectronics
TL061ACDT
STMicroelectronics
TL061IDT
STMicroelectronics
TL061ACDT
STMicroelectronics
TL061ACD
20 mA
8-SOIC
3.5 V/µs
6 V
1
30 pA
70 °C
0 °C
3 mV
Surface Mount
8-SOIC
3.9 mm
0.154 in
200 µA
36 V
J-FET
1 MHz
STMicroelectronics
TL061CDT
STMicroelectronics
TL061IDT

Description

General part information

TL061 Series

The TL061 is a high-speed JFET input single operational amplifier, that incorporates wellmatched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit.

The device features high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient.

Documents

Technical documentation and resources