IRF9335TRPBF

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Infineon Technologies

IR MOSFET™ P-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 59 MOHM;

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Infineon Technologies

IR MOSFET™ P-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 59 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9335TRPBF

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	386 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	FET Type
Infineon Technologies IRF9335TRPBF	2.4 V	4.5 V 10 V	Surface Mount	MOSFET (Metal Oxide)	5.4 A	14 nC	386 pF	-55 °C	150 °C	20 V	30 V	8-SO	8-SOIC	3.9 mm	0.154 in	2.5 W	P-Channel

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