
TQM110NB04DCR RLG
ActiveTaiwan Semiconductor Corporation
MOSFET 2N-CH 40V 10A 8PDFNU

TQM110NB04DCR RLG
ActiveTaiwan Semiconductor Corporation
MOSFET 2N-CH 40V 10A 8PDFNU
Description
General part information
TQM110NB04DCR RLG
MOSFET 2N-CH 40V 10A 8PDFNU
Technical Specifications
Parameters and characteristics for this part
| Specification | TQM110NB04DCR RLG |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Current - Continuous Drain (Id) (Tc) | 50 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Max) | 26 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1354 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 5 mm |
| Package Name | 8-PDFNU |
| Package Width | 6 mm |
| Power - Max (Ta) | 2.5 W |
| Power - Max (Tc) | 58 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 11 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3.8 V |
Pricing
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