Description
General part information
IMCQ120R005M2HXTMA1
SIC DISCRETE
Technical Specifications
Parameters and characteristics for this part
| Specification | IMCQ120R005M2HXTMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 261 nC |
| Input Capacitance (Ciss) (Max) | 9760 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Package Name | PG-HDSOP-22 |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
Pricing
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