Jantx2N2222AUA
ActiveBIPOLAR TRANSISTORS - BJT 40V 800MA 500MW SMALL-SIGNAL BJT SMT
Jantx2N2222AUA
ActiveBIPOLAR TRANSISTORS - BJT 40V 800MA 500MW SMALL-SIGNAL BJT SMT
Description
General part information
2N2222 Series
This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.The device packages for the encapsulated device types are as follows: 2N2221A and 2N2222A (TO-18, UA, UB, UBC, UBN, and UBCN). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/255
Technical Specifications
Parameters and characteristics for this part
| Specification | Jantx2N2222AUA |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 50 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Grade | Military |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | 4-SMD |
| Package Name | 4-SMD |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500, 255 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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