Description
General part information
ISC012N03LF2SATMA1
Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on)of 1.2 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the ISC012N03LF2S achieves up to 40% RDS(on)improvement while having up to 60% FOM enhancement and excellent robustness.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC012N03LF2SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 43 A |
| Current - Continuous Drain (Id) (Tc) | 270 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 104 nC, 104 nC |
| Input Capacitance (Ciss) (Max) | 4700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-62 |
| Power Dissipation (Max) | 167 W, 3 W |
| Rds On (Max) | 1.28 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.35 V |
Pricing
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