Description
General part information
IKB30N65EH5ATMA1
Hard-switching 650 V, 30 ATRENCHSTOP™ 5high speed IGBT inD2Pak(TO263) package copacked with full rated current Rapid 1 anti parallel diode, redefines "Best-in-class"IGBTby providing unmatched performance in terms of efficiency for hard switching applications. This family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Technical Specifications
Parameters and characteristics for this part
| Specification | IKB30N65EH5ATMA1 |
|---|---|
| Current - Collector (Ic) (Max) | 55 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 70 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3 |
| Power - Max | 188 VA |
| Reverse Recovery Time (trr) | 75 ns |
| Switching Energy (Off) | 300 µJ |
| Switching Energy (On) | 870 µJ |
| Td (off) @ 25°C | 159 ns |
| Td (on) @ 25°C | 24 ns |
| Test Condition Current | 30 A |
| Test Condition Resistance | 22 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
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