Description
General part information
SPD04P10PLGBTMA1
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Technical Specifications
Parameters and characteristics for this part
| Specification | SPD04P10PLGBTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4.2 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 16 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 372 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3 |
| Power Dissipation (Max) | 38 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 850 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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