
S3M0160120D
ActiveSMC Diode Solutions
SILICON CARBIDE MOSFET, 160MOHM,

S3M0160120D
ActiveSMC Diode Solutions
SILICON CARBIDE MOSFET, 160MOHM,
Description
General part information
S3M0160120D
SILICON CARBIDE MOSFET, 160MOHM,
Technical Specifications
Parameters and characteristics for this part
| Specification | S3M0160120D |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 19 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 31 nC |
| Input Capacitance (Ciss) (Max) | 548 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247AD |
| Power Dissipation (Max) | 163 W |
| Rds On (Max) | 208 mOhm, 208 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -4 V |
| Vgs (Max) Positive | 18 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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