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S3M0160120D

S3M0160120D

Active
SMC Diode Solutions

SILICON CARBIDE MOSFET, 160MOHM,

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S3M0160120D

S3M0160120D

Active
SMC Diode Solutions

SILICON CARBIDE MOSFET, 160MOHM,

Find alt

Description

General part information

S3M0160120D

SILICON CARBIDE MOSFET, 160MOHM,

Technical Specifications

Parameters and characteristics for this part

SpecificationS3M0160120D
Current - Continuous Drain (Id) (Tc)19 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)31 nC
Input Capacitance (Ciss) (Max)548 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247AD
Power Dissipation (Max)163 W
Rds On (Max)208 mOhm, 208 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-4 V
Vgs (Max) Positive18 V
Vgs(th) (Max)4 V

Pricing

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CAD

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