Description
General part information
IPA040N08NM5SXKSA1
Infineon’s OptiMOS™ 5 power MOSFET 80V (IPA040N08NM5S) is meeting the requirements for improved system efficiency while reducing system costs. It has low on-state resistance RDS(on)of 4.0mOhm and low voltage overshoot. The new TO-220 FullPAK package portfolio extension is optimized for TV, desktop, adapter and gaming applications.OptiMOS™ power MOSFETsfeature increased power density as well as improved efficiency and are therefore the perfect solution for synchronous rectification.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPA040N08NM5SXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 75 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 93 nC |
| Input Capacitance (Ciss) (Max) | 6400 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | PG-TO220-FP |
| Power Dissipation (Max) | 39 W |
| Rds On (Max) | 4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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