Specification	IXSJ80N120R1K

Current - Continuous Drain (Id) (Tc)	85 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	155 nC
Input Capacitance (Ciss) (Max)	4556 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-247-4
Package Name	ISO247-4L
Power Dissipation (Max)	223.2 W
Rds On (Max)	23.4 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	21 V
Vgs(th) (Max)	4.8 V

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