RS1FLJ-M3/H
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO219AB
RS1FLJ-M3/H
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO219AB
Description
General part information
RS1FLJ-M3/H
Diode 600 V 1A Surface Mount DO-219AB (SMF)
Technical Specifications
Parameters and characteristics for this part
| Specification | RS1FLJ-M3/H |
|---|---|
| Capacitance | 7 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | DO-219AB |
| Package Name | DO-219AB (SMF) |
| Reverse Recovery Time (trr) | 500 ns |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 1.2 V |
Pricing
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CAD
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Documents
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