Specification	HAT1127HWS-E

Current - Continuous Drain (Id) (Ta)	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	125 nC, 125 nC
Input Capacitance (Ciss) (Max)	5600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK
Power Dissipation (Max)	30 W
Rds On (Max)	4.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-20 V
Vgs (Max) Positive	10 V
Vgs(th) (Max)	2.5 V

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