DMN1033UCB4-7
ObsoleteDiodes Inc
MOSFET 2N-CH 12V U-WLB1818-4
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DocumentsRecommended Soldering Techniques
DMN1033UCB4-7
ObsoleteDiodes Inc
MOSFET 2N-CH 12V U-WLB1818-4
Deep-Dive with AI
DocumentsRecommended Soldering Techniques
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN1033UCB4-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 37 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-UFBGA, WLBGA |
| Power - Max [Max] | 1.45 W |
| Technology | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMN1033UCB4 Series
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources