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SQJ122ELP-T1_GE3

SQJ122ELP-T1_GE3

Active
Vishay Dale

N-CHANNEL 30-V (D-S) 175C MOSFET

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SQJ122ELP-T1_GE3

SQJ122ELP-T1_GE3

Active
Vishay Dale

N-CHANNEL 30-V (D-S) 175C MOSFET

Find alt

Description

General part information

SQJ122ELP-T1_GE3

N-CHANNEL 30-V (D-S) 175C MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJ122ELP-T1_GE3
Current - Continuous Drain (Id) (Tc)101 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)51 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2798 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8
Package NamePowerPAK® SO-8
Power Dissipation (Max)60 W
QualificationAEC-Q101
Rds On (Max)3.25 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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