Description
General part information
BFP410H6327XTSA1
NPN Silicon RF Transistor for low current applications
Technical Specifications
Parameters and characteristics for this part
| Specification | BFP410H6327XTSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 40 mA |
| DC Current Gain (hFE) (Min) | 60 |
| Frequency - Transition | 25 GHz |
| Gain | 21.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure (Typical) | 1.2 dB |
| Operating Temperature | 150 °C |
| Package / Case | SOT-343, SC-82A |
| Package Name | PG-SOT343-4-2 |
| Power - Max | 150 mW |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5 V |
Pricing
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CAD
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