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PMCXB900UEZ

PMCXB900UEZ

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NXP USA Inc.

MOSFET N/P-CH 20V 0.6A 6DFN

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PMCXB900UEZ

PMCXB900UEZ

Active
NXP USA Inc.

MOSFET N/P-CH 20V 0.6A 6DFN

Find alt

Description

General part information

PMCXB900UEZ

MOSFET N/P-CH 20V 0.6A 6DFN

Technical Specifications

Parameters and characteristics for this part

SpecificationPMCXB900UEZ
ConfigurationP-Channel Complementary, N
Current - Continuous Drain (Id) (Maximum)500 mA
Current - Continuous Drain (Id) (Typical)600 mA
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Max)0.7 nC
Input Capacitance (Ciss) (Max)21.3 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-XFDFN Exposed Pad
Package NameDFN1010B-6
Power - Max265 mW
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)950 mV

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