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Description

General part information

TPH1R306PL,L1Q

MOSFET N-CH 60V 100A 8SOP

Technical Specifications

Parameters and characteristics for this part

SpecificationTPH1R306PL,L1Q
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)91 nC
Input Capacitance (Ciss) (Max)8100 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerVDFN
Package Length5 mm
Package Name8-SOP Advance
Package Width5 mm
Power Dissipation (Max)960 mW, 170 W
Rds On (Max)1.34 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

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