
TPH1R306PL,L1Q
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 60V 100A 8SOP

TPH1R306PL,L1Q
ActiveToshiba Semiconductor and Storage
MOSFET N-CH 60V 100A 8SOP
Description
General part information
TPH1R306PL,L1Q
MOSFET N-CH 60V 100A 8SOP
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH1R306PL,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 91 nC |
| Input Capacitance (Ciss) (Max) | 8100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-SOP Advance |
| Package Width | 5 mm |
| Power Dissipation (Max) | 960 mW, 170 W |
| Rds On (Max) | 1.34 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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