Specification	MXP120A045FE-T1GE3

Current - Continuous Drain (Id) (Tc)	49 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	18 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	75.6 nC
Input Capacitance (Ciss) (Max)	1958 pF
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Power Dissipation (Max)	212 W
Rds On (Max)	56 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	22 V
Vgs(th) (Max)	2.38 V

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