Specification	DIW170SIC750

Current - Continuous Drain (Id) (Tc)	5 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	13 nC, 13 nC, 13 nC
Input Capacitance (Ciss) (Max)	380 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247
Power Dissipation (Max)	62 W
Rds On (Max)	750 mOhm, 750 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

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